Infineon IRF Type N-Channel MOSFET, 192 A, 75 V, 3-Pin TO-247
- RS 제품 번호:
- 244-2929
- 제조사 부품 번호:
- IRF300P227
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 400 units)*
₩2,511,680.00
일시적 품절
- 2026년 6월 02일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 400 - 400 | ₩6,279.20 | ₩2,511,529.60 |
| 800 - 800 | ₩6,153.24 | ₩2,461,296.00 |
| 1200 + | ₩6,031.04 | ₩2,412,040.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-2929
- 제조사 부품 번호:
- IRF300P227
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | IRF | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series IRF | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRF300P227 qualification report describes the characteristics of the product with respect to quality and reliability. The qualification sample selection was done on production lots which were manufactured and tested on standard production processes and meet the defined requirements. The qualification test results of those products as outlined in this document are based on JEDEC for target applications and may reference existing qualification results of similar products. Such referencing is justified by the structural similarity of the products.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
관련된 링크들
- Infineon IRF Type N-Channel MOSFET, 192 A, 75 V, 3-Pin TO-247 IRF300P227
- Infineon StrongIRFET Type N-Channel MOSFET, 100 A, 300 V Enhancement, 3-Pin TO-247 IRF300P226
- Infineon HEXFET Type N-Channel MOSFET, 192 A, 100 V TO-220 IRF100B201
- Infineon StrongIRFET Type N-Channel MOSFET, 100 A, 300 V Enhancement, 3-Pin TO-247
- Infineon IPA Type N-Channel MOSFET, 192 A, 40 V, 3-Pin TO-263 IRF100S201
- Infineon HEXFET Type N-Channel MOSFET, 192 A, 100 V TO-220
- Infineon HEXFET Type N-Channel MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-220 IRF2807ZPBF
- Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-220 IRF2907ZPBF
