Infineon AUIRFS N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-252 AUIRLR3410TRL
- RS 제품 번호:
- 244-2883
- 제조사 부품 번호:
- AUIRLR3410TRL
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 2 units)*
₩11,220.00
마지막 RS 재고
- 최종적인 1,422 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩5,610.00 | ₩11,220.00 |
| 10 - 98 | ₩5,460.00 | ₩10,920.00 |
| 100 - 248 | ₩5,330.00 | ₩10,660.00 |
| 250 - 498 | ₩5,220.00 | ₩10,440.00 |
| 500 + | ₩5,100.00 | ₩10,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-2883
- 제조사 부품 번호:
- AUIRLR3410TRL
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | AUIRFS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series AUIRFS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRLR3410TRL specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
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