Infineon ISS Type P-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-23 ISS17EP06LMXTSA1

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Subtotal (1 pack of 10 units)*

₩3,480.00

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한팩당
한팩당*
10 - 10₩348.00₩3,480.00
20 - 90₩340.00₩3,400.00
100 - 240₩334.00₩3,340.00
250 - 490₩324.00₩3,240.00
500 +₩312.00₩3,120.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
244-2275
제조사 부품 번호:
ISS17EP06LMXTSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

ISS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel Power MOSFET offer design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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