Infineon IPC N-Channel MOSFET, 100 A, 40 V N, 8-Pin SuperSO8 5 x 6 IPC50N04S5L5R5ATMA1
- RS 제품 번호:
- 243-9318
- 제조사 부품 번호:
- IPC50N04S5L5R5ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (5000 units, on reels of 5000)*
₩2,670,000.00
재고있음
- 5,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 - 5000 | ₩534.00 | ₩2,673,000.00 |
| 10000 - 10000 | ₩524.00 | ₩2,619,000.00 |
| 15000 + | ₩508.00 | ₩2,541,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 243-9318
- 제조사 부품 번호:
- IPC50N04S5L5R5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPC Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPC50N04S5L5R5ATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding environments. It delivers substantial continuous drain current while operating across a wide temperature range and conforms to environmental and automotive material requirements.
Features and Benefits:
• 100 A continuous drain current enables heavy-load switching
• 1.4 mΩ Rds(on) minimises conduction losses
• 40V drain-source rating supports low-voltage power rails
• 81W power dissipation allows sustained thermal loading
• 80 nC typical gate charge eases gate-drive requirements
• 20V maximum gate-source rating preserves gate-voltage margin
• 1.4 mΩ Rds(on) minimises conduction losses
• 40V drain-source rating supports low-voltage power rails
• 81W power dissipation allows sustained thermal loading
• 80 nC typical gate charge eases gate-drive requirements
• 20V maximum gate-source rating preserves gate-voltage margin
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current DC-DC converter stages
• Used for electric motor drive half-bridge legs
• Can be used for synchronous rectification in power supplies
• Appropriate for surface-mounted power-management assemblies
• Ideal for high-current DC-DC converter stages
• Used for electric motor drive half-bridge legs
• Can be used for synchronous rectification in power supplies
• Appropriate for surface-mounted power-management assemblies
What thermal range can it withstand?
It operates from −55 °C up to 175 °C for environments with wide temperature variation.
How many pins and what package does it use?
It is supplied in an 8-pin SuperSO8 package sized 5 x 6 mm for surface mounting.
Is it compliant with environmental material standards?
It meets RoHS requirements for restricted substances.
What gate-drive considerations arise from its electrical characteristics?
The typical gate charge is 80 nC and the maximum VGS is 20 V, so gate drivers should provide sufficient charge and respect the 20 V limit.
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