Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1

RS 제품 번호:: 243-9316
제조사 부품 번호:: IAUC80N04S6N036ATMA1
제조업체:: Infineon

Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1

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Subtotal (5000 units, on reels of 5000)*

₩3,010,000.00

5,000 개 단위 배송 준비 완료

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수량	한팩당	릴당*
5000 - 5000	₩602.00	₩3,010,000.00
10000 - 10000	₩590.00	₩2,950,000.00
15000 +	₩572.00	₩2,862,000.00

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RS 제품 번호:: 243-9316
제조사 부품 번호:: IAUC80N04S6N036ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SuperSO8 5 x 6
	Series	IAUC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 20V
	Package Type SuperSO8 5 x 6
	Series IAUC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUC80N04S6N036ATMA1

Infineon IAUC Series MOSFET, 20V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6N036ATMA1

This MOSFET is a power-switching transistor designed for high-current, surface-mount applications in harsh environments. It operates as an N-channel enhancement device and is suited to thermal and electrical duty where elevated temperatures and robust current handling are required. The component is RoHS approved and built to automotive qualification standards for use in demanding vehicle electronics.

Features and Benefits:

• Maximum continuous drain current 80 A enables high-current delivery
• Very low RDS(on) 1.4 mΩ reduces conduction losses
• Maximum power dissipation 81 W supports heavy switching loads
• Gate charge Qg 80 nC allows predictable drive requirements
• Maximum VDS 20 V permits low-voltage system integration

Applications

• Suitable for DC-DC converter stages in automotive systems
• Used with power-management modules in electrified vehicles
• Ideal for motor-drive MOSFET stages in auxiliary systems
• Can be used for battery protection and power distribution

What gate-drive considerations are necessary for efficient switching?

Expect a typical total gate charge of 80 nC, so gate drivers must source and sink adequate current to achieve desired switching speeds while managing switching losses.

How does thermal range affect deployment in vehicle electronics?

The device supports operation from -55°C to 175°C, enabling placement near heat-generating components and within engine-bay ambient conditions.

What mounting and package constraints apply to circuit layout?

It is supplied in a SuperSO8 5x6 surface-mount package with eight pins, requiring a PCB footprint and thermal management consistent with that package type.

Which voltage and polarity limitations should designers observe?

The device has a maximum gate-to-source voltage of 20 V and a maximum drain-to-source voltage of 20 V, so system voltages must remain within those limits.