Infineon IAUC N-Channel MOSFET, 60 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1

RS 제품 번호:: 243-9314
제조사 부품 번호:: IAUC60N04S6N044ATMA1
제조업체:: Infineon

Infineon IAUC N-Channel MOSFET, 60 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (5 units, in packs of 5)*

₩11,720.00

일시적 품절

2027년 4월 13일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩2,344.00	₩11,720.00
10 - 95	₩2,284.00	₩11,420.00
100 - 245	₩2,232.00	₩11,160.00
250 - 495	₩2,176.00	₩10,880.00
500 +	₩2,128.00	₩10,640.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 243-9314
제조사 부품 번호:: IAUC60N04S6N044ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SuperSO8 5 x 6
	Series	IAUC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 20V
	Package Type SuperSO8 5 x 6
	Series IAUC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUC60N04S6N044ATMA1

Infineon IAUC Series MOSFET, 20V Maximum Drain Source Voltage, 60A Maximum Continuous Drain Current - IAUC60N04S6N044ATMA1

This MOSFET is an N-channel enhancement-mode transistor designed for high-current switching in automotive and industrial environments. It operates across a broad temperature range and is intended for surface-mount integration where robust drain-source handling and gate control are required.

Features and Benefits:

• Low on-resistance 1.4 mΩ reduces conduction losses
• High continuous drain current 60 A supports heavy loads
• Drain-source voltage 20 V allows low-voltage system use
• Power dissipation 81 W enables sustained thermal performance
• Gate charge 80 nC provides predictable switching energy
• Gate-source voltage rating 20 V permits wide drive margins

Applications

• Used for DC motor drivers in automotive systems
• Suitable for battery management and power distribution
• Ideal for high-current load switching on control modules
• Can be used for power conversion in vehicle electronics
• Used with thermal management systems in harsh environments

What temperature extremes can it withstand in operation?

It is rated to function from −55 °C up to 175 °C, accommodating wide ambient and thermal conditions.

What package and mounting style is provided for board assembly?

It is supplied in a SuperSO8 5x6 package and intended for surface mounting.

How does its regulatory status affect selection for production?

It complies with RoHS directives, indicating use of restricted substances aligns with common manufacturing requirements.

Which automotive qualification applies to this device for vehicle electronics?

It meets AEC‑Q101 automotive qualification, making it suitable for automotive component specifications.