Infineon ISP Type P-Channel MOSFET, -3.70 A, 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1

RS 제품 번호:: 243-9277
제조사 부품 번호:: ISP650P06NMXTSA1
제조업체:: Infineon

Infineon ISP Type P-Channel MOSFET, -3.70 A, 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1

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Subtotal (1 pack of 2 units)*

₩6,280.00

158 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩3,140.00	₩6,280.00
10 - 98	₩3,050.00	₩6,100.00
100 - 248	₩2,980.00	₩5,960.00
250 - 498	₩2,920.00	₩5,840.00
500 +	₩2,850.00	₩5,700.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 243-9277
제조사 부품 번호:: ISP650P06NMXTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.70A
	Maximum Drain Source Voltage Vds	60V
	Series	ISP
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.70A
	Maximum Drain Source Voltage Vds 60V
	Series ISP
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - ISP650P06NMXTSA1

Infineon ISP Series MOSFET, 60V Maximum Drain‑Source Voltage, 81W Maximum Power Dissipation - ISP650P06NMXTSA1

This MOSFET is a P‑channel enhancement device designed for surface‑mounted power switching in demanding temperature environments. It operates across a broad thermal range and is supplied in a Compact SOT‑223 package suited to assemblies requiring a through‑power handling footprint while conserving board area.

Features and Benefits:

• 65mΩ Rds(on) reduces conduction losses for efficient power transfer
• -3.70A continuous drain current supports steady‑state load operation
• 80 nC typical gate charge enables controlled switching dynamics
• 60V drain‑source rating allows higher‑voltage switching applications
• 81W power dissipation manages thermal energy in Compact packages

Applications

• Suitable for automotive control modules requiring temperature resilience
• Ideal for power rails in industrial control electronics
• Used for load switching in battery management systems
• Can be used for reverse‑polarity and high‑side switching circuits

What ambient temperatures can it operate across?

It functions across a wide range from -55°C to +150°C, enabling use in harsh thermal conditions.

What package and mounting method does it use?

It is supplied in a SOT‑223 package designed for surface mounting to printed circuit boards.

What gate voltage limits must be observed?

The gate‑to‑source maximum rating is 20V and should not be exceeded to prevent damage.

Is it suitable for automotive‑grade applications?

It conforms to AEC‑Q101, supporting qualification for automotive electronic implementations.

Does it meet environmental substance restrictions?

It is RoHS‑compliant, meeting restrictions on certain hazardous materials.