Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1
- RS 제품 번호:
- 241-9688
- 제조사 부품 번호:
- IPG20N06S4L14AATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩8,478.80
재고있음
- 14,995 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩1,695.76 | ₩8,478.80 |
| 10 - 95 | ₩1,654.40 | ₩8,272.00 |
| 100 - 245 | ₩1,616.80 | ₩8,084.00 |
| 250 - 495 | ₩1,575.44 | ₩7,877.20 |
| 500 + | ₩1,537.84 | ₩7,689.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 241-9688
- 제조사 부품 번호:
- IPG20N06S4L14AATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPG20N06S4L-14A | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPG20N06S4L-14A | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 N-channel automotive MOSFET has 60 V drain source voltage (VDS) & 20 A drain current (ID). It comes in dual SS08 (PG-TDSON-8) package. It is feasible for automatic optical inspection (AOI).
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Feasible for automatic optical inspection (AOI)
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