Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ160EP-T1_GE3
- RS 제품 번호:
- 239-8666
- 제조사 부품 번호:
- SQJ160EP-T1_GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩15,980.00
마지막 RS 재고
- 최종적인 2,740 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,196.00 | ₩15,980.00 |
| 50 - 95 | ₩3,139.60 | ₩15,698.00 |
| 100 - 245 | ₩3,079.44 | ₩15,397.20 |
| 250 - 995 | ₩3,026.80 | ₩15,134.00 |
| 1000 + | ₩2,974.16 | ₩14,870.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-8666
- 제조사 부품 번호:
- SQJ160EP-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 410A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.002Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Width | 4.9 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 410A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.002Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Width 4.9 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJ is automotive N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
관련된 링크들
- Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3
- Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L
- Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ170ELP-T1_GE3
- Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ140ELP-T1_GE3
- Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJA26EP-T1_GE3
- Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay SQJ738EP Dual N-Channel Single MOSFETs, 123 A, 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3
