Vishay Type N-Channel MOSFET, 37 A, 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- RS 제품 번호:
- 239-8640
- 제조사 부품 번호:
- SIJH600E-T1-GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 239-8640
- 제조사 부품 번호:
- SIJH600E-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 141nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 141nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 8mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for battery management, motor drive control and synchronous rectification.
Fully lead free device
Low switching and power loss
UIS tested
Smaller footprint
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