STMicroelectronics STD Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 239-6329
- 제조사 부품 번호:
- STD86N3LH5
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩3,646,500.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩1,458.60 | ₩3,646,987.50 |
| 5000 - 5000 | ₩1,415.70 | ₩3,537,300.00 |
| 7500 + | ₩1,372.80 | ₩3,431,512.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-6329
- 제조사 부품 번호:
- STD86N3LH5
- 제조업체:
- STMicroelectronics
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | STD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series STD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Height 2.4mm | ||
Length 6.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Low on-resistance RDSon
High avalanche ruggedness
Low gate drive power losses
30 V Vdss
80 A Id
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