Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

RS 제품 번호:: 239-5398
제조사 부품 번호:: SISA10BDN-T1-GE3
제조업체:: Vishay

Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

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Subtotal (1 pack of 10 units)*

₩16,080.00

추가로 2026년 8월 24일 부터 6,030 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 40	₩1,608.00	₩16,080.00
50 - 90	₩1,558.00	₩15,580.00
100 - 240	₩1,514.00	₩15,140.00
250 - 990	₩1,468.00	₩14,680.00
1000 +	₩1,424.00	₩14,240.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5398
제조사 부품 번호:: SISA10BDN-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Series	SISA10BDN
	Package Type	PowerPAK 1212-8PT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	63W
	Typical Gate Charge Qg @ Vgs	11.7nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Standards/Approvals	RoHS
	Height	0.75mm
	Width	3.3mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Series SISA10BDN
	Package Type PowerPAK 1212-8PT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 63W
	Typical Gate Charge Qg @ Vgs 11.7nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Standards/Approvals RoHS
	Height 0.75mm
	Width 3.3mm
	Automotive Standard No

Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3

This n-channel MOSFET is a surface-mount power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments where efficient conduction and fast gate response are required. The device is offered in a low-profile package optimised for assembly onto densely populated boards.

Features and Benefits:

• Very low on-resistance 0.0036Ω enables reduced conduction losses
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages

Applications

• Suitable for synchronous buck regulator switching stages
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules

What mounting method is required for reliable assembly?

It is a surface-mount component in a PowerPAK 1212-8PT format, intended for reflow soldering to a PCB footprint designed for thermal and electrical contact.

How does ambient temperature affect operating capability?

The device is specified to function from -55°C up to 150°C, permitting operation in both sub-zero and elevated-temperature environments with appropriate thermal management.

What type of conduction channel does it use?

It employs an N-type channel, which is suitable for low-voltage, high-current switching applications.

Is the device compliant with environmental restrictions?

It meets RoHS requirements, indicating it lacks restricted hazardous substances under the standard.