Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

RS 제품 번호:: 239-5398
제조사 부품 번호:: SISA10BDN-T1-GE3
제조업체:: Vishay

Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

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Subtotal (1 pack of 10 units)*

₩11,973.00

6,030 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 40	₩1,197.30	₩11,973.00
50 - 90	₩1,160.25	₩11,602.50
100 - 240	₩1,127.10	₩11,271.00
250 - 990	₩1,092.00	₩10,920.00
1000 +	₩1,060.80	₩10,608.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5398
제조사 부품 번호:: SISA10BDN-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Series	SISA10BDN
	Package Type	PowerPAK 1212-8PT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Maximum Power Dissipation Pd	63W
	Typical Gate Charge Qg @ Vgs	11.7nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Width	3.3mm
	Height	0.75mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Series SISA10BDN
	Package Type PowerPAK 1212-8PT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Maximum Power Dissipation Pd 63W
	Typical Gate Charge Qg @ Vgs 11.7nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Width 3.3mm
	Height 0.75mm
	Standards/Approvals RoHS
	Automotive Standard No

Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3

This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in Compact electronic assemblies. It operates across a wide temperature range and suits applications demanding substantial continuous drain current and efficient conduction at low voltage. The device integrates a low on-resistance and modest gate charge to balance switching performance and thermal handling in densely packaged systems.

Features and Benefits:

• 104A continuous drain current enables high-current switching capability
• 30V drain-source rating supports low-voltage power rails
• 0.0036Ω Rds(on) reduces conduction losses and heat generation
• 11.7nC gate charge allows efficient gate drive and switching control
• 63W power dissipation accommodates significant thermal load
• 20V maximum gate-source voltage protects gate from overdrive

Applications

• Suitable for motor driver stages in automation equipment
• Ideal for high-current DC-DC converter outputs
• Used for synchronous rectification in power supplies
• Can be used for load switching in industrial controllers
• Used with Compact power modules requiring SMD mounting

What temperature extremes can the device withstand during operation?

It is rated to operate from -55°C up to 150°C, allowing use in challenging thermal environments.

Which package type should designers allow footprint space for?

The component is supplied in a PowerPAK 1212-8PT surface-mount package requiring an 8-pin SMD footprint.

How does the component perform under high-power conditions thermally?

Maximum power dissipation is 63W, indicating the device can handle substantial power when mounted with appropriate PCB thermal management.

Is it suitable where automotive qualification is mandatory?

The device is not specified as meeting automotive standard approvals, so it should not be assumed to replace automotive-qualified parts.

What gate drive considerations are necessary to avoid damage?

Gate drive amplitude must not exceed 20V to remain within the maximum gate-source voltage rating.