Toshiba Type N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T
- RS 제품 번호:
- 236-3575
- 제조사 부품 번호:
- SSM3K329R,LF(T
- 제조업체:
- Toshiba
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩16,074.00
단종되는 중
- 최종적인 2,200 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 50 | ₩321.48 | ₩16,055.20 |
| 100 - 200 | ₩315.84 | ₩15,773.20 |
| 250 - 450 | ₩310.20 | ₩15,472.40 |
| 500 - 950 | ₩304.56 | ₩15,209.20 |
| 1000 + | ₩298.92 | ₩14,946.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 236-3575
- 제조사 부품 번호:
- SSM3K329R,LF(T
- 제조업체:
- Toshiba
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 289mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 2.4mm | |
| Standards/Approvals | No | |
| Width | 2.9 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 289mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 2.4mm | ||
Standards/Approvals No | ||
Width 2.9 mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching and high speed switching applications.
Storage temperature range −55 to 150 °C
관련된 링크들
- Toshiba Type N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T
- Toshiba Single 1 Type N-Channel MOSFET Enhancement, 3-Pin SOT-23 SSM3K361R,LF(B
- Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T
- Toshiba Type N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 SSM3K341R,LF(T
- Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
- Toshiba Type P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 SSM3J328R,LF(T
- Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T
- Toshiba Type P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 SSM3J351R,LF(T