Infineon ISP Type P-Channel MOSFET, 3.9 A, 100 V Enhancement, 3-Pin SOT-223 ISP16DP10LMXTSA1

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Subtotal (1 reel of 1000 units)*

₩794,000.00

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  • 2027년 1월 22일 부터 배송
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1000 - 4000₩794.00₩794,000.00
5000 +₩770.00₩770,200.00

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RS 제품 번호:
235-4876
제조사 부품 번호:
ISP16DP10LMXTSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.38Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11.6nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

5.35mm

Length

6.1mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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