STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2
- RS 제품 번호:
- 234-8896
- 제조사 부품 번호:
- STH200N10WF7-2
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩8,967.60
일시적 품절
- 880 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩8,967.60 |
| 10 - 99 | ₩8,779.60 |
| 100 - 249 | ₩8,591.60 |
| 250 - 499 | ₩8,422.40 |
| 500 + | ₩8,290.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 234-8896
- 제조사 부품 번호:
- STH200N10WF7-2
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK-2 | |
| Series | STH200 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK-2 | ||
Series STH200 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Best-in-class SOA capability
High current surge capability
Extremely low on-resistance
관련된 링크들
- STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2
- STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 80 V Enhancement, 3-Pin H2PAK STH270N8F7-2
- STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK STH310N10F7-2
- STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 80 V Enhancement, 3-Pin H2PAK