STMicroelectronics STH200 N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2
- RS 제품 번호:
- 234-8896
- 제조사 부품 번호:
- STH200N10WF7-2
- 제조업체:
- STMicroelectronics
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대량 구매 할인 받기
10개 더 담고 ₩2,200.00 할인 받기
View bulk pricing optionsSubtotal (1 unit)*
₩10,900.00
일시적 품절
- 2026년 11월 16일 부터 868 개 단위 배송
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수량 | 한팩당 | 절감 |
|---|---|---|
| 1 - 9 | ₩10,900.00 | - |
| 10 - 99 | ₩10,680.00 | ₩2,200.00 |
| 100 - 249 | ₩10,460.00 | ₩44,000.00 |
| 250 - 499 | ₩10,240.00 | ₩165,000.00 |
| 500 + | ₩10,080.00 | ₩410,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 234-8896
- 제조사 부품 번호:
- STH200N10WF7-2
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STH200 | |
| Package Type | H2PAK-2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Power Dissipation Pd | 340W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STH200 | ||
Package Type H2PAK-2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Power Dissipation Pd 340W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Best-in-class SOA capability
High current surge capability
Extremely low on-resistance
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