STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기

Subtotal (1 reel of 1000 units)*

₩9,140,560.00

Add to Basket
수량 선택 또는 입력
일시적 품절
  • 2026년 6월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
릴당*
1000 +₩9,140.56₩9,140,184.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
481-127
제조사 부품 번호:
STH65N050DM9-7AG
제조업체:
STMicroelectronics
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

STH65N

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Transistor Configuration

N-Channel

Maximum Operating Temperature

150°C

Width

24.3 mm

Length

15.25mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics N-Channel Power MOSFET is built on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features extremely low RDS(on) per area and a fast-recovery diode, making it Ideal for high-efficiency switching. The DM9 silicon technology utilizes a multi-drain manufacturing process that enhances device structure and performance. With very low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this MOSFET is optimized for demanding bridge topologies and ZVS phase-shift converters.

Low gate charge and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Excellent switching performance thanks to the extra driving source pin

AEC-Q101 qualified

관련된 링크들