onsemi UniFET II Type N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223
- RS 제품 번호:
- 229-6326
- 제조사 부품 번호:
- FDT4N50NZU
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 4000 units)*
₩3,775,040.00
일시적 품절
- 2026년 5월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 4000 - 8000 | ₩943.76 | ₩3,776,544.00 |
| 12000 - 16000 | ₩924.96 | ₩3,700,592.00 |
| 20000 + | ₩906.16 | ₩3,626,896.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6326
- 제조사 부품 번호:
- FDT4N50NZU
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-223 | |
| Series | UniFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Height | 1.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-223 | ||
Series UniFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Height 1.7mm | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
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