Infineon IPP026N10NF2S N-Channel MOSFET, 27 A, 100 V, 3-Pin TO-220 IPP026N10NF2SAKMA1

RS 제품 번호:: 228-6544
제조사 부품 번호:: IPP026N10NF2SAKMA1
제조업체:: Infineon

Infineon IPP026N10NF2S N-Channel MOSFET, 27 A, 100 V, 3-Pin TO-220 IPP026N10NF2SAKMA1

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Subtotal (1 tube of 1000 units)*

₩3,426,000.00

일시적 품절

2027년 2월 17일 부터 배송

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수량	한팩당	Per Tube*
1000 - 1000	₩3,426.00	₩3,425,800.00
2000 - 2000	₩3,358.00	₩3,357,200.00
3000 +	₩3,290.00	₩3,290,200.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-6544
제조사 부품 번호:: IPP026N10NF2SAKMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	IPP026N10NF2S
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.6mΩ
	Typical Gate Charge Qg @ Vgs	103nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Height	9.45mm
	Length	10.36mm
	Standards/Approvals	No
	Width	4.57mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series IPP026N10NF2S
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.6mΩ
	Typical Gate Charge Qg @ Vgs 103nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Height 9.45mm
	Length 10.36mm
	Standards/Approvals No
	Width 4.57mm
	Automotive Standard No

Datasheet-IPP026N10NF2SAKMA1

Infineon IPP026N10NF2S Series MOSFET, 100V Maximum Drain Source Voltage, 27A Maximum Continuous Drain Current - IPP026N10NF2SAKMA1

This MOSFET is a high-power N-channel semiconductor designed for switching and power-control duties in demanding thermal environments. It delivers substantial continuous current handling and a high drain-source voltage rating, suitable for circuits requiring robust conduction and switching performance. Housed in a through‑hole TO-220 package, it is intended for applications where straightforward mounting and heat‑sinking are required.

Features and Benefits:

• Low on-resistance reduces conduction losses during high-current operation
• High drain-source voltage supports 100 V switching applications
• High continuous drain current enables sustained 27 A loads
• Elevated power dissipation allows 250 W thermal throughput
• Moderate gate charge permits manageable drive energy at high power

Applications

• Suitable for high-current switching in power supplies
• Used with discrete heatsinks for industrial converters
• Ideal for motor‑driver stages requiring 27 A capability
• Can be used for 100 V DC‑DC converter switches
• Suitable for through‑hole prototyping and repair work

What gate voltage limits should be observed during use?

The device must not exceed a gate-source voltage of 20 V to avoid gate damage.

What thermal range can it withstand in operating conditions?

It can operate across a temperature span from −55 °C up to 175 °C for high-temperature environments.

How should the package be mounted for optimal cooling?

The through‑hole TO-220 format permits attachment to a PCB and direct mounting of a heatsink to the tab to maximise power dissipation.

What conduction characteristic affects switching efficiency?

The device has a very low drain-source resistance of approximately 2.6 mΩ, which reduces I^2R losses during conduction.

How does gate charge influence driver selection?

A typical total gate charge of 103 nC requires a driver capable of supplying sufficient charge rapidly to achieve desired switching speeds while managing drive losses.