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Infineon IAUS300N08S5N011T N-Channel MOSFET, 400 A, 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N011TATMA1

RS 제품 번호:: 228-6524
제조사 부품 번호:: IAUS300N08S5N011TATMA1
제조업체:: Infineon

Infineon IAUS300N08S5N011T N-Channel MOSFET, 400 A, 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N011TATMA1

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Subtotal (1 reel of 1800 units)*

₩10,198,800.00

3,600 개 단위 배송 준비 완료

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RS 제품 번호:: 228-6524
제조사 부품 번호:: IAUS300N08S5N011TATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	400A
	Maximum Drain Source Voltage Vds	80V
	Series	IAUS300N08S5N011T
	Package Type	HDSOP
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	375W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 400A
	Maximum Drain Source Voltage Vds 80V
	Series IAUS300N08S5N011T
	Package Type HDSOP
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 375W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet-IAUS300N08S5N011TATMA1

Infineon IAUS300N08S5N011T Series MOSFET, 80V Maximum Drain Source Voltage, 400A Maximum Continuous Drain Current - IAUS300N08S5N011TATMA1

This MOSFET is a high-current switching device designed for demanding automotive and industrial environments, offering N-channel enhancement-mode operation in a Compact surface-mount package. It is intended to control large drain currents and withstand elevated temperatures while providing low conduction losses for power conversion and switching applications.

Features and Benefits:

• 400A continuous drain current provides high-current switching capability
• 1.1mΩ Rds(on) minimises conduction losses during load cycles
• 80V drain-source rating allows higher-voltage system compatibility
• 375W maximum power dissipation supports heavy-duty thermal loading
• ±20V gate tolerance permits robust gate-drive voltages
• -55°C to 175°C operating range enables wide-temperature reliability

Applications

• Suitable for automotive powertrain inverter stages
• Ideal for high-current DC-DC converters in vehicles
• Used with traction motor controllers in electric vehicles
• Can be used for industrial motor-drive switching
• Used for high-power battery management and distribution

What package type and mounting method does it use?

It is supplied in an HDSOP package intended for surface mounting which facilitates Compact board layouts and thermal management.

What diode characteristic should be considered for reverse conduction?

The intrinsic diode exhibits a forward voltage of 1.2V which informs conduction losses during freewheeling intervals.

How many electrical connections are available on the device?

The component provides 16 pins to support gate, drain and source routing for high-current board designs.

What semiconductor channel and operating mode does it employ?

The device uses an N-type channel operating in enhancement mode suitable for standard MOSFET gate-drive architectures.