Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

RS 제품 번호:: 228-2835
제조사 부품 번호:: SIA938DJT-T1-GE3
제조업체:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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Subtotal (1 pack of 25 units)*

₩29,500.00

추가로 2026년 8월 24일 부터 5,975 개 단위 배송

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수량	한팩당	한팩당*
25 - 25	₩1,180.00	₩29,500.00
50 - 75	₩1,158.00	₩28,960.00
100 - 225	₩1,138.00	₩28,460.00
250 - 975	₩1,118.00	₩27,940.00
1000 +	₩1,098.00	₩27,440.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-2835
제조사 부품 번호:: SIA938DJT-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	21.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	7.8W
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-70
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 21.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 7.8W
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - SIA938DJT-T1-GE3

Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3

This MOSFET is a compact dual N-channel enhancement-mode transistor designed for surface-mount power management. It offers a low-voltage switching solution suitable for dense electronic assemblies and is intended for applications requiring dual-channel control in an 8-pin SC-70 package. The device handles moderate continuous currents and dissipates limited power while operating across a wide temperature span.

Features and Benefits:

• Low on-resistance of 21.5 mΩ reduces conduction losses
• Maximum drain voltage of 20V supports low-voltage systems
• Continuous drain current rating of 4.5A enables moderate loads
• Gate charge of 3.5 nC allows faster switching and lower drive energy
• Power dissipation capability of 7.8W aids thermal budgeting
• Operating range -55 to 150 °C permits high-temperature deployment

Applications

• Suitable for battery-powered DC distribution stages
• Ideal for synchronous rectification in power converters
• Used for dual-channel load switching on compact boards
• Can be used for motor-drive low-voltage stages
• Suited to thermally challenged environments requiring high-temperature parts

What mounting method does it support on a PCB?

It is supplied for surface-mount assembly in an 8-pin SC-70 package, facilitating automated soldering and compact layout.

How does the device handle gate-drive limits?

The gate-source voltage must not exceed 12V to prevent gate-dielectric stress during operation.

Is the transistor suitable for complementary configurations?

It is a dual N-channel arrangement with two elements per die, allowing paired switch topologies where two N-type devices are required.

What thermal extremes can it tolerate in use?

The device is rated to operate down to -55 °C and up to 150 °C, permitting use across a broad thermal envelope.