제조사부품번호

Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

RS 제품 번호:: 814-1225
제조사 부품 번호:: SIA517DJ-T1-GE3
제조업체:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

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RS 제품 번호:: 814-1225
제조사 부품 번호:: SIA517DJ-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	12V
	Series	TrenchFET
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.7nC
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	6.5W
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Standards/Approvals	No
	Length	2.15mm
	Height	0.8mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 12V
	Series TrenchFET
	Package Type SC-70
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.7nC
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 6.5W
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Standards/Approvals No
	Length 2.15mm
	Height 0.8mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

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