Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 223-8514
- 제조사 부품 번호:
- IPD26N06S2L35ATMA2
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩1,452,300.00
재고있음
- 2,500 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩580.92 | ₩1,451,360.00 |
| 5000 - 5000 | ₩569.64 | ₩1,422,220.00 |
| 7500 + | ₩556.48 | ₩1,393,550.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 223-8514
- 제조사 부품 번호:
- IPD26N06S2L35ATMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series N-channel MOSFET in DPAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
관련된 링크들
- Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2
- Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252 IPD14N06S280ATMA2