Infineon IMZ1 Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 222-4868
- 제조사 부품 번호:
- IMZ120R140M1HXKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩204,788.40
재고있음
- 1,290 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 60 | ₩6,826.28 | ₩204,788.40 |
| 90 - 120 | ₩6,563.08 | ₩196,909.32 |
| 150 + | ₩6,480.36 | ₩194,410.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4868
- 제조사 부품 번호:
- IMZ120R140M1HXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | IMZ1 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series IMZ1 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
관련된 링크들
- Infineon IMZ1 Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R140M1HXKSA1
- Infineon IMZ1 Type N-Channel MOSFET, 13 A, 1200 V Enhancement, 4-Pin TO-247
- Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247
- Infineon IMZ1 Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 4-Pin TO-247
- Infineon IMZ1 Type N-Channel MOSFET, 13 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R220M1HXKSA1
- Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R090M1HXKSA1
- Infineon IMZ1 Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R030M1HXKSA1
- Infineon IMZ1 Type N-Channel MOSFET, 4.7 A, 1200 V Enhancement, 4-Pin TO-247