Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247 AUIRFP4568
- RS 제품 번호:
- 222-4612
- 제조사 부품 번호:
- AUIRFP4568
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩16,337.20
재고있음
- 1,080 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩16,337.20 |
| 10 - 99 | ₩16,055.20 |
| 100 - 249 | ₩15,754.40 |
| 250 - 499 | ₩15,472.40 |
| 500 + | ₩15,209.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4612
- 제조사 부품 번호:
- AUIRFP4568
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 20.7 mm | |
| Height | 5.31mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 20.7 mm | ||
Height 5.31mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V TO-247 AUIRFP4568-E
- Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V TO-247
- Infineon HEXFET Type N-Channel Power MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET Type N-Channel Power MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247AC
- Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247 AUIRFP4110
- Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220
