onsemi NVTFS Type N-Channel MOSFET, 28.3 A, 30 V Enhancement, 8-Pin WDFN NVTFS4C02NTAG
- RS 제품 번호:
- 221-6760
- 제조사 부품 번호:
- NVTFS4C02NTAG
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩26,263.60
마지막 RS 재고
- 최종적인 1,430 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,626.36 | ₩26,257.96 |
| 20 - 90 | ₩2,547.40 | ₩25,472.12 |
| 100 - 240 | ₩2,470.32 | ₩24,706.96 |
| 250 - 490 | ₩2,397.00 | ₩23,966.24 |
| 500 + | ₩2,323.68 | ₩23,246.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6760
- 제조사 부품 번호:
- NVTFS4C02NTAG
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NVTFS | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Height | 3.15mm | |
| Width | 0.8 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NVTFS | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Height 3.15mm | ||
Width 0.8 mm | ||
Automotive Standard No | ||
The ON Semiconductor Automotive power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. The wettable flank option available for enhanced optical inspection. It used AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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