제조사부품번호

onsemi NTMT150N Type N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN NTMT150N65S3HF

RS 제품 번호:: 221-6738
제조사 부품 번호:: NTMT150N65S3HF
제조업체:: onsemi

onsemi NTMT150N Type N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN NTMT150N65S3HF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩17,878.80

마지막 RS 재고

최종적인 130 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
2 - 8	₩8,939.40	₩17,878.80
10 - 98	₩8,770.20	₩17,540.40
100 - 248	₩8,619.80	₩17,239.60
250 - 498	₩8,460.00	₩16,920.00
500 +	₩8,319.00	₩16,638.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 221-6738
제조사 부품 번호:: NTMT150N65S3HF
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PQFN
	Series	NTMT150N
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	192W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	43nC
	Maximum Operating Temperature	175°C
	Width	1.1 mm
	Length	8.1mm
	Standards/Approvals	RoHS
	Height	8.1mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type PQFN
	Series NTMT150N
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 192W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 43nC
	Maximum Operating Temperature 175°C
	Width 1.1 mm
	Length 8.1mm
	Standards/Approvals RoHS
	Height 8.1mm
	Automotive Standard No

Datasheet - NTMT150N65S3HF

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 400 pF

100% avalanche tested

onsemi NTMT150N Type N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN NTMT150N65S3HF

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