onsemi NTMFS006N Type N-Channel MOSFET, 93 A, 120 V Enhancement, 5-Pin DFN NTMFS006N12MCT1G
- RS 제품 번호:
- 221-6722
- 제조사 부품 번호:
- NTMFS006N12MCT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩28,632.40
마지막 RS 재고
- 최종적인 250 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,863.24 | ₩28,632.40 |
| 20 - 90 | ₩2,778.64 | ₩27,786.40 |
| 100 - 240 | ₩2,694.04 | ₩26,940.40 |
| 250 - 490 | ₩2,613.20 | ₩26,132.00 |
| 500 + | ₩2,534.24 | ₩25,342.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6722
- 제조사 부품 번호:
- NTMFS006N12MCT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | NTMFS006N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Length | 5.3mm | |
| Standards/Approvals | No | |
| Height | 6.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series NTMFS006N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Length 5.3mm | ||
Standards/Approvals No | ||
Height 6.3mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MV MOSFET is produced using advanced power trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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