Infineon HEXFET Type N-Channel MOSFET & Diode, 8.8 A, 30 V Enhancement, 8-Pin PQFN

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
220-7487
제조사 부품 번호:
IRFHS8342TRPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

2.1W

Maximum Operating Temperature

175°C

Width

1 mm

Height

2.1mm

Length

2.1mm

Standards/Approvals

Industrial Qualification, MSL1, RoHS

Automotive Standard

No

The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount power package

Low RDS(on) in a small package

Small outline

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

High power density

Compact form factor for space critical applications

관련된 링크들