제조사부품번호

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 220-7456
제조사 부품 번호:: IPW60R099P6XKSA1
제조업체:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩115,789.20

재고있음

240 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩3,859.64	₩115,772.28
60 - 90	₩3,799.48	₩114,001.32
120 +	₩3,716.76	₩111,485.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7456
제조사 부품 번호:: IPW60R099P6XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	109A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS P6
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	278W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	70nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	16.13mm
	Width	5.21 mm
	Height	21.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 109A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS P6
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 278W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 70nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 16.13mm
	Width 5.21 mm
	Height 21.1mm
	Automotive Standard No

Datasheet - IPW60R099P6XKSA1

The Infineon's Cool MOS P6 super junction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. Cool MOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Reduced gate charge (Q g)

Higher V the

Good body diode ruggedness

Optimized integrated R g

Improved dv/dt from 50V/ns

Cool MOS™ quality with over 12 years manufacturing experience in super junction technology

Improved efficiency especially in light load condition

Better efficiency in soft switching applications due to earlier turn-off

Suitable for hard- & soft-switching topologies

Optimized balance of efficiency and ease of use and good controllability of switching behaviour

High robustness and better efficiency

Outstanding quality & reliability

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247

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