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Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

RS 제품 번호:: 219-6023
제조사 부품 번호:: IPW60R045P7XKSA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

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Subtotal (1 unit)*

₩11,148.40

재고있음

327 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩11,148.40
10 - 99	₩10,866.40
100 - 249	₩10,603.20
250 - 499	₩10,340.00
500 +	₩10,076.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-6023
제조사 부품 번호:: IPW60R045P7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	206A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	201W
	Typical Gate Charge Qg @ Vgs	90nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Standards/Approvals	No
	Width	21.1 mm
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 206A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 201W
	Typical Gate Charge Qg @ Vgs 90nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Standards/Approvals No
	Width 21.1 mm
	Height 5.21mm
	Automotive Standard No

Datasheet - IPW60R045P7XKSA1

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

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