제조사부품번호

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

RS 제품 번호:: 220-7430
제조사 부품 번호:: IPL60R095CFD7AUMA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

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대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩10,287,360.00

일시적 품절

2026년 5월 14일 부터 3,000 개 단위 배송
추가로 2026년 5월 21일 부터 3,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 12000	₩3,429.12	₩10,290,180.00
15000 +	₩3,361.44	₩10,084,320.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7430
제조사 부품 번호:: IPL60R095CFD7AUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS
	Package Type	VSON
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	147W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	8.1mm
	Width	8.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS
	Package Type VSON
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 147W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 8.1mm
	Width 8.1 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPL60R095CFD7AUMA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

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