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Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 90 A, 40 V Enhancement, 8-Pin TDSON IPC90N04S53R6ATMA1

RS 제품 번호:: 220-7402
제조사 부품 번호:: IPC90N04S53R6ATMA1
제조업체:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 90 A, 40 V Enhancement, 8-Pin TDSON IPC90N04S53R6ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 15 units)*

₩17,145.60

재고있음

추가로 2026년 2월 16일 부터 8,655 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
15 - 1245	₩1,143.04	₩17,145.60
1260 - 2490	₩1,114.84	₩16,713.20
2505 +	₩1,096.04	₩16,450.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7402
제조사 부품 번호:: IPC90N04S53R6ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS 5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	63W
	Maximum Operating Temperature	175°C
	Length	5.25mm
	Standards/Approvals	No
	Width	5.58 mm
	Height	1.1mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS 5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 63W
	Maximum Operating Temperature 175°C
	Length 5.25mm
	Standards/Approvals No
	Width 5.58 mm
	Height 1.1mm
	Automotive Standard AEC-Q101

Datasheet - IPC90N04S53R6ATMA1

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

OptiMOS™ - power MOSFET for automotive applications

N-channel - Enhancement mode - Logic Level

MSL1 up to 260°C peak reflow

175°C operating temperature

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 90 A, 40 V Enhancement, 8-Pin TDSON IPC90N04S53R6ATMA1

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