Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 100 A, 40 V Enhancement, 8-Pin TDSON
- RS 제품 번호:
- 220-7399
- 제조사 부품 번호:
- IPC100N04S5L1R1ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 5000 units)*
₩7,031,200.00
마지막 RS 재고
- 최종적인 5,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 - 20000 | ₩1,406.24 | ₩7,030,260.00 |
| 25000 + | ₩1,378.04 | ₩6,890,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7399
- 제조사 부품 번호:
- IPC100N04S5L1R1ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 5.58 mm | |
| Length | 5.25mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 5.58 mm | ||
Length 5.25mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Logic Level
MSL1 up to 260°C peak reflow
175°C operating temperature
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