Infineon 600V CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V N, 3-Pin TO-220 IPA60R160P6XKSA1
- RS 제품 번호:
- 218-2999
- 제조사 부품 번호:
- IPA60R160P6XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩24,999.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩4,999.80 | ₩24,999.00 |
| 15 - 20 | ₩4,871.10 | ₩24,355.50 |
| 25 + | ₩4,797.00 | ₩23,985.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-2999
- 제조사 부품 번호:
- IPA60R160P6XKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 176W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 176W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ N-channel power MOSFET. The CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. The extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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