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Infineon OptiMOS 5 N-Channel MOSFET, 260 A, 100 V Enhancement, 8-Pin HSOF IAUT260N10S5N019ATMA1

RS 제품 번호:: 218-2989
제조사 부품 번호:: IAUT260N10S5N019ATMA1
제조업체:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 260 A, 100 V Enhancement, 8-Pin HSOF IAUT260N10S5N019ATMA1

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Subtotal (1 reel of 2000 units)*

₩7,560,000.00

일시적 품절

2027년 2월 15일 부터 배송

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수량	한팩당	릴당*
2000 - 2000	₩3,780.00	₩7,561,200.00
4000 - 6000	₩3,704.00	₩7,410,000.00
8000 +	₩3,632.00	₩7,262,000.00

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RS 제품 번호:: 218-2989
제조사 부품 번호:: IAUT260N10S5N019ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	260A
	Maximum Drain Source Voltage Vds	100V
	Package Type	HSOF
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 260A
	Maximum Drain Source Voltage Vds 100V
	Package Type HSOF
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IAUT260N10S5N019ATMA1

Infineon OptiMOS 5 Series MOSFET, 100V Drain Source Voltage, 260A Continuous Drain Current - IAUT260N10S5N019ATMA1

This MOSFET is a high-current N-channel enhancement device designed for surface-mounted power switching in demanding environments. It operates across a wide temperature range suited to harsh conditions and is built for applications requiring substantial drain current handling, tight on-resistance, and robust gate-voltage tolerance.

Features and Benefits:

• 1.9mΩ Rds(on) delivers reduced conduction losses
• 260A continuous drain current enables high-current handling
• 100V drain-source rating supports mid-voltage systems
• ±20V gate tolerance allows flexible drive voltages
• 300W power dissipation permits substantial thermal loading
• 1.3V forward voltage minimises diode conduction losses

Applications

• Suitable for automotive powertrain and motor drives
• Ideal for high-current DC-DC conversion stages
• Used with battery management and energy storage systems
• Can be used for power distribution in electrified vehicles
• Suitable for surface-mount assemblies requiring Compact power MOSFETs

What temperature extremes can it withstand in operation?

It is specified for continuous use from -55°C to +175°C.

What package and mounting style are provided for Compact assemblies?

It is supplied in an HSOF package intended for surface mounting with eight pins.

How does the device support automotive qualification needs?

It meets automotive AEC-Q101 requirements for components used in vehicle environments.

What channel type and mode determine switching behaviour?

It uses an N-channel device operating in enhancement mode for controlled conduction.

What electrical limits should be observed for gate and drain voltages?

Gate-source voltage must remain within ±20V and drain-source voltage within 100V.