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Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

RS 제품 번호:: 217-2612
제조사 부품 번호:: IRFH8325TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

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RS 제품 번호:: 217-2612
제조사 부품 번호:: IRFH8325TRPBF
제조업체:: Infineon

참조 문서

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제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	82A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Power Dissipation Pd	3.6W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	4.98 mm
	Height	1.17mm
	Standards/Approvals	RoHS
	Length	6.02mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 82A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Power Dissipation Pd 3.6W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 4.98 mm
	Height 1.17mm
	Standards/Approvals RoHS
	Length 6.02mm
	Automotive Standard No

Datasheet - IRFH8325TRPBF

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Industry standard surface-mount power package

Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

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