제조사부품번호

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1

RS 제품 번호:: 217-2502
제조사 부품 번호:: IPAN70R600P7SXKSA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩12,445.60

재고있음

400 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 80	₩622.28	₩12,445.60
100 +	₩614.76	₩12,295.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2502
제조사 부품 번호:: IPAN70R600P7SXKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	82W
	Typical Gate Charge Qg @ Vgs	20.5nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	29.87mm
	Length	16.1mm
	Width	4.8 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 82W
	Typical Gate Charge Qg @ Vgs 20.5nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 29.87mm
	Length 16.1mm
	Width 4.8 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPAN70R600P7SXKSA1

The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.

Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off

Highly performant technology

Low switching losses (E oss)

Highly efficient

Excellent thermal behaviour

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1

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