제조사부품번호

Infineon CoolMOS Type N-Channel MOSFET, 5.2 A, 650 V N, 3-Pin TO-220 IPA65R1K5CEXKSA1

RS 제품 번호:: 217-2490
제조사 부품 번호:: IPA65R1K5CEXKSA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 5.2 A, 650 V N, 3-Pin TO-220 IPA65R1K5CEXKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩26,320.00

현재 액세스할 수 없는 재고 정보

수량	한팩당	한팩당*
20 - 80	₩1,316.00	₩26,320.00
100 +	₩1,300.96	₩26,000.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2490
제조사 부품 번호:: IPA65R1K5CEXKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	CoolMOS
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	N
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	15.3nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	29.75mm
	Length	10.65mm
	Width	4.9 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series CoolMOS
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode N
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 15.3nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 29.75mm
	Length 10.65mm
	Width 4.9 mm
	Automotive Standard No

Datasheet - IPA65R1K5CEXKSA1

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Infineon CoolMOS Type N-Channel MOSFET, 5.2 A, 650 V N, 3-Pin TO-220 IPA65R1K5CEXKSA1

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