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Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 IPW60R080P7XKSA1

RS 제품 번호:: 215-2568
제조사 부품 번호:: IPW60R080P7XKSA1
제조업체:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 IPW60R080P7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩39,931.20

재고있음

90 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩7,986.24	₩39,931.20
10 - 10	₩7,786.96	₩38,934.80
15 +	₩7,662.88	₩38,314.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2568
제조사 부품 번호:: IPW60R080P7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS C7
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	129W
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS C7
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 129W
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R080P7XKSA1

The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

Excellent ESD robustness >2kV(HBM) for all products

Significant reduction of switching and conduction losses

Wide portfolio in through hole and surface mount packages

Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 IPW60R080P7XKSA1

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