Infineon OptiMOS-T2 Type N-Channel MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 IPD25N06S4L30ATMA2

This MOSFET is a power-switching transistor designed for surface-mount applications where robust current handling and a wide temperature range are required. It operates as an enhancement-mode N-channel device and is suited to circuits needing controlled conduction between drain and source under applied gate drive. The component is presented in a TO-252 package for PCB mounting and accommodates typical gate-drive voltages used in discrete power stages.

• 60V drain voltage rating enables mid-voltage system use
• 25A continuous current supports high-load switching
• 300 mΩ maximum Rds(on) reduces conduction losses
• 29W maximum power dissipation handles thermal stress
• 16.3 nC typical gate charge enables faster switching
• ±20V gate-voltage rating tolerates common gate excursions

• Suitable for DC-DC converter switch stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge configurations
• Can be used for battery-management switching elements
• Appropriate for general-purpose low-voltage power switching

It functions across a broad range from -55 °C up to 150 °C, allowing deployment in severe thermal environments.

A typical gate charge of 16.3 nC determines the drive energy required and impacts switching speed and driver sizing for efficient transitions.

The TO-252 surface-mount package requires adequate copper-pad area and thermal vias on the PCB to disperse heat and meet the 29W dissipation capability.

The device accepts gate voltages up to ±20V, which sets the maximum allowable drive to avoid gate overstress.