Infineon CoolMOS P6 Type N-Channel MOSFET, 22.4 A, 600 V Enhancement, 5-Pin VSON IPL60R180P6AUMA1
- RS 제품 번호:
- 214-9074
- 제조사 부품 번호:
- IPL60R180P6AUMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩14,833.20
재고있음
- 2,950 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 745 | ₩2,966.64 | ₩14,833.20 |
| 750 - 1495 | ₩2,891.44 | ₩14,457.20 |
| 1500 + | ₩2,846.32 | ₩14,231.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-9074
- 제조사 부품 번호:
- IPL60R180P6AUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | VSON | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Power Dissipation Pd | 176W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type VSON | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Power Dissipation Pd 176W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Easy to use/drive
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