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Infineon CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R360P7SXKSA1

RS 제품 번호:: 214-9005
제조사 부품 번호:: IPA70R360P7SXKSA1
제조업체:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R360P7SXKSA1

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Subtotal (50 units, in tubes of 50)*

₩78,200.00

2,600 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩1,564.00	₩78,240.00
100 - 150	₩1,518.00	₩75,900.00
200 +	₩1,472.00	₩73,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-9005
제조사 부품 번호:: IPA70R360P7SXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-220
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	26.5W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-220
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 26.5W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA70R360P7SXKSA1

Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IPA70R360P7SXKSA1

This MOSFET is a high-voltage, N-channel enhancement transistor designed for power switching in industrial and power-conversion environments. It operates across a wide ambient temperature range and is supplied in a through-hole TO-220 package for straightforward board mounting and heat-sinking in discrete power assemblies.

Features and Benefits:

• 700V drain capability enables high-voltage switching applications
• 12.5A continuous current supports substantial load currents
• 360mΩ Rds minimises conduction losses at rated conditions
• 26.5W power dissipation allows sustained thermal loading
• 0.9V forward voltage reduces voltage drop in conduction
• 30V gate tolerance permits common gate-drive voltages

Applications

• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial power converters requiring 700V devices
• Used for discrete switch stages in high-voltage assemblies
• Can be used for through-hole prototyping and repair
• Suitable for systems operating across wide temperature ranges

What is the allowable gate drive magnitude?

The device accepts up to 30V between gate and source as its maximum gate limit.

How does the package assist thermal management?

The TO-220 through-hole format permits direct attachment to heat-sinks and ease of mounting for improved heat dissipation.

What temperature extremes can it tolerate in operation?

It is rated for operation from -40°C up to +150°C ambient conditions.

What conduction characteristic affects power loss during on-state?

The on-resistance of 360mΩ directly influences conduction losses when carrying current.

Which parameter indicates continuous load capability?

The continuous drain current rating of 12.5A defines its steady-state current handling.