Infineon OptiMOS P3 Type P-Channel MOSFET, 39.6 A, 30 V Enhancement, 8-Pin TSDSON BSZ180P03NS3GATMA1
- RS 제품 번호:
- 214-8990
- 제조사 부품 번호:
- BSZ180P03NS3GATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩37,694.00
재고있음
- 5,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 1200 | ₩753.88 | ₩37,712.80 |
| 1250 - 2450 | ₩735.08 | ₩36,754.00 |
| 2500 + | ₩723.80 | ₩36,208.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-8990
- 제조사 부품 번호:
- BSZ180P03NS3GATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 39.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P3 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 39.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P3 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS single P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, battery management and load switching.
It has 150 °C operating temperature
Qualified according to JEDEC for target applications
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