Infineon OptiMOS N-Channel MOSFET, 147 A, 25 V Enhancement, 8-Pin TDSON BSC015NE2LS5IATMA1

RS 제품 번호:: 214-8972
제조사 부품 번호:: BSC015NE2LS5IATMA1
제조업체:: Infineon

Infineon OptiMOS N-Channel MOSFET, 147 A, 25 V Enhancement, 8-Pin TDSON BSC015NE2LS5IATMA1

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Subtotal (1 pack of 15 units)*

₩29,760.00

일시적 품절

2027년 9월 16일 부터 4,995 개 단위 배송

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수량	한팩당	한팩당*
15 - 1245	₩1,984.00	₩29,760.00
1260 - 2490	₩1,936.00	₩29,040.00
2505 +	₩1,902.00	₩28,540.00

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RS 제품 번호:: 214-8972
제조사 부품 번호:: BSC015NE2LS5IATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	147A
	Maximum Drain Source Voltage Vds	25V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Power Dissipation Pd	50W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16V
	Forward Voltage Vf	650mV
	Maximum Operating Temperature	150°C
	Length	5.49mm
	Height	1.1mm
	Width	6.35mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 147A
	Maximum Drain Source Voltage Vds 25V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Power Dissipation Pd 50W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16V
	Forward Voltage Vf 650mV
	Maximum Operating Temperature 150°C
	Length 5.49mm
	Height 1.1mm
	Width 6.35mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC015NE2LS5IATMA1

Infineon OptiMOS Series MOSFET, 50W Maximum Power Dissipation, 25V Maximum Drain Source Voltage - BSC015NE2LS5IATMA1

This MOSFET is a high-current N‑channel enhancement device designed for surface-mount power switching and load control in demanding thermal environments. It operates across a wide temperature span and is specified for significant continuous drain current and power handling, making it suitable for applications that require low conduction losses and Rapid gate-driven switching.

Features and Benefits:

• 1.5mΩ Rds(on) reduces conduction losses at high currents
• 147A continuous drain current supports heavy load currents
• 50W power dissipation enables sustained power handling
• 22nC typical gate charge allows efficient switching control
• 0.65V forward voltage minimises voltage drop under load
• 25V drain‑source rating suits low‑voltage power rails

Applications

• Suitable for high‑current DC-DC converters
• Ideal for synchronous rectification in power supplies
• Used for motor drive stages in power electronics
• Can be used for battery protection and distribution
• Appropriate for power switching in Compact SMD assemblies

What package and mounting style does it use?

It is supplied in an 8‑pin TDSON package intended for surface-mount assembly.

What voltage limits should be observed during circuit design?

The maximum drain‑source voltage is 25V and maximum gate‑source voltage is 16V.

How does it perform across temperature extremes?

It is specified to operate from −55°C up to 150°C for an extended thermal range.

What channel type and mode are implemented?

The device is an N‑channel enhancement‑mode MOSFET.

What physical footprint constraints are relevant for PCB layout?

The package measures approximately 5.49mm by 6.35mm with a height of 1.1mm.