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Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

RS 제품 번호:: 214-8970
제조사 부품 번호:: BSC010N04LSIATMA1
제조업체:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩11,242.40

재고있음

추가로 2026년 1월 26일 부터 4,050 개 단위 배송

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수량	한팩당	한팩당*
5 - 1245	₩2,248.48	₩11,242.40
1250 - 2495	₩2,192.08	₩10,960.40
2500 +	₩2,158.24	₩10,791.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-8970
제조사 부품 번호:: BSC010N04LSIATMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	275A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.05mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	139W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.7V
	Typical Gate Charge Qg @ Vgs	87nC
	Maximum Operating Temperature	150°C
	Height	1.2mm
	Length	5.35mm
	Standards/Approvals	No
	Width	6.1 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 275A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.05mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 139W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.7V
	Typical Gate Charge Qg @ Vgs 87nC
	Maximum Operating Temperature 150°C
	Height 1.2mm
	Length 5.35mm
	Standards/Approvals No
	Width 6.1 mm
	Automotive Standard No

Datasheet - BSC010N04LSIATMA1

The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

Monolithic integrated Schottky-like diode

Optimized for synchronous rectification

100% avalanche tested

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

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