Infineon OptiMOS N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON
- RS 제품 번호:
- 214-8966
- 제조사 부품 번호:
- BSB104N08NP3GXUSA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 214-8966
- 제조사 부품 번호:
- BSB104N08NP3GXUSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | MG-WDSON | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 10.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Height | 700μm | |
| Length | 5.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type MG-WDSON | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 10.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Height 700μm | ||
Length 5.05mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling
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