Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 214-4475
- 제조사 부품 번호:
- SN7002NH6327XTSA2
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩225,600.00
재고있음
- 3,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩75.20 | ₩224,472.00 |
| 6000 - 9000 | ₩73.32 | ₩217,704.00 |
| 12000 + | ₩71.44 | ₩211,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-4475
- 제조사 부품 번호:
- SN7002NH6327XTSA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, AEC Q101 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Maximum Power Dissipation Pd 0.36W | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, AEC Q101 | ||
Automotive Standard No | ||
This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.
It is Halogen-free according to IEC61249-2-21
관련된 링크들
- Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- Infineon SN7002W Type N-Channel MOSFET, 0.23 A, 60 V Enhancement, 3-Pin SOT-323
- Infineon SIPMOS Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223
- Infineon SN7002W Type N-Channel MOSFET, 0.23 A, 60 V Enhancement, 3-Pin SOT-323 SN7002WH6327XTSA1