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Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

RS 제품 번호:: 214-4364
제조사 부품 번호:: IPB017N10N5LFATMA1
제조업체:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩20,116.00

재고있음

1,662 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 248	₩10,058.00	₩20,116.00
250 - 498	₩9,804.20	₩19,608.40
500 +	₩9,653.80	₩19,307.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-4364
제조사 부품 번호:: IPB017N10N5LFATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	313W
	Typical Gate Charge Qg @ Vgs	195nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	10.31mm
	Height	4.57mm
	Width	9.45 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 313W
	Typical Gate Charge Qg @ Vgs 195nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 10.31mm
	Height 4.57mm
	Width 9.45 mm
	Standards/Approvals No
	Automotive Standard No

IPB017N10N5LFATMA1 Datasheet

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features

•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits

•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

•Telecom

•Battery management

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

Combining a low RDS(on) with a wide safe operating area (SOA)

Summary of Features

Benefits

Potential Applications

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