DiodesZetex Dual DMN3006SCA6 1 N-Channel MOSFET, 13 A, 30 V Enhancement, 6-Pin X4-DSN
- RS 제품 번호:
- 213-9170
- 제조사 부품 번호:
- DMN3006SCA6-7
- 제조업체:
- DiodesZetex
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- RS 제품 번호:
- 213-9170
- 제조사 부품 번호:
- DMN3006SCA6-7
- 제조업체:
- DiodesZetex
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참조 문서
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제품 세부 사항
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X4-DSN | |
| Series | DMN3006SCA6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0048Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 950mV | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 110μm | |
| Length | 3.5mm | |
| Standards/Approvals | UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020 | |
| Width | 1.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X4-DSN | ||
Series DMN3006SCA6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0048Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 950mV | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 110μm | ||
Length 3.5mm | ||
Standards/Approvals UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020 | ||
Width 1.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The DiodesZetex DMN3006SCA6 series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
ESD protected gate
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