제조사부품번호

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 210-4973
제조사 부품 번호:: SiHB186N60EF-GE3
제조업체:: Vishay

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩147,204.00

마지막 RS 재고

최종적인 150 개 unit(s)이 배송 준비 됨

수량	한팩당	Per Tube*
50 - 50	₩2,944.08	₩147,222.80
100 - 450	₩2,880.16	₩144,026.80
500 +	₩2,793.68	₩139,702.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 210-4973
제조사 부품 번호:: SiHB186N60EF-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.4A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	168mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.06mm
	Length	14.61mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.4A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 168mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.06mm
	Length 14.61mm
	Automotive Standard No

Datasheet - SiHB186N60EF-GE3

The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263

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